MRF6S21100HR3 vs MRFG35010NT1 Vergleich

Detaillierter Direktvergleich von MRF6S21100HR3 von NXP Semiconductors und MRFG35010NT1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S21100HR3 MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 ✓ Aktiv
NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete

Spezifikationsvergleich

Parameter MRF6S21100HR3 MRFG35010NT1
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $38,95 $25,95
Transistortyp LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) GaAs pHEMT RF Power FET
Configuration Single Unmatched, common source
Frequency Band 2.11 GHz to 2.17 GHz —
Output Power (Average) 23 W (W-CDMA, CW equivalent ~100 W PEP) —
Power Gain (Typ) 15.9 dB at 2.14 GHz —
Drain-Source Voltage Rating (VDS max) 68 V —
Test Supply Voltage (VDD) 28 V —
Quiescent Drain Current (IDQ) 950 mA —
Test Drain Current 950 mA —
Gehäuse NI-780H-2L (ceramic flange) —
Montageart Surface Mount / bolt-down flange Chassis-mount / flange-bolt
Maximum Power Dissipation (Abs) 388 W —
Operating Mode Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) —
Terminal Position Dual —
Lead Free Status [DATA_NEEDED: RoHS/lead-free explicit statement] Lead free (per datasheet)
RoHS-Status [DATA_NEEDED: explicit RoHS compliance statement] [DATA_NEEDED: RoHS status]
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Number — MRFG35010NT1
Drain-Source Voltage Rating (Vds) — 15 V
Continuous Drain Current Rating — 2.9 A
Operating Frequency — 3.55 GHz
Frequency Range — 1.8 GHz to 3.6 GHz
Test Voltage — 12 V
Test Current (quiescent) — 180 mA
Associated Power Gain — 10 dB at 3.55 GHz
Output Power — 9 W at 3.55 GHz
Class of Operation — Class AB linear
Gehäuse / Bauform — PLD-1.5 flanged ceramic
Supplier Device Package — PLD-1.5

Datenblätter & Ressourcen

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