MRF6S21100HR3 vs MRFG35010NT1 Comparaison
Comparaison détaillée côte à côte de MRF6S21100HR3 par NXP Semiconductors et MRFG35010NT1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF6S21100HR3 | MRFG35010NT1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $38,95 | $25,95 |
| Type de transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | GaAs pHEMT RF Power FET |
| Configuration | Single | Unmatched, common source |
| Frequency Band | 2.11 GHz to 2.17 GHz | — |
| Output Power (Average) | 23 W (W-CDMA, CW equivalent ~100 W PEP) | — |
| Power Gain (Typ) | 15.9 dB at 2.14 GHz | — |
| Drain-Source Voltage Rating (VDS max) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 950 mA | — |
| Test Drain Current | 950 mA | — |
| Boîtier | NI-780H-2L (ceramic flange) | — |
| Type de montage | Surface Mount / bolt-down flange | Chassis-mount / flange-bolt |
| Maximum Power Dissipation (Abs) | 388 W | — |
| Operating Mode | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) | — |
| Terminal Position | Dual | — |
| Lead Free Status | [DATA_NEEDED: RoHS/lead-free explicit statement] | Lead free (per datasheet) |
| Statut RoHS | [DATA_NEEDED: explicit RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRFG35010NT1 |
| Drain-Source Voltage Rating (Vds) | — | 15 V |
| Continuous Drain Current Rating | — | 2.9 A |
| Operating Frequency | — | 3.55 GHz |
| Frequency Range | — | 1.8 GHz to 3.6 GHz |
| Test Voltage | — | 12 V |
| Test Current (quiescent) | — | 180 mA |
| Associated Power Gain | — | 10 dB at 3.55 GHz |
| Output Power | — | 9 W at 3.55 GHz |
| Class of Operation | — | Class AB linear |
| Boîtier / Format | — | PLD-1.5 flanged ceramic |
| Supplier Device Package | — | PLD-1.5 |