MRF6S21100HR3 vs MRFG35010NT1 비교
다음의 상세 나란히 비교: MRF6S21100HR3 제조: NXP Semiconductors 및 MRFG35010NT1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6S21100HR3 | MRFG35010NT1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $38.95 | $25.95 |
| 트랜지스터 유형 | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | GaAs pHEMT RF Power FET |
| Configuration | Single | Unmatched, common source |
| Frequency Band | 2.11 GHz to 2.17 GHz | — |
| Output Power (Average) | 23 W (W-CDMA, CW equivalent ~100 W PEP) | — |
| Power Gain (Typ) | 15.9 dB at 2.14 GHz | — |
| Drain-Source Voltage Rating (VDS max) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 950 mA | — |
| Test Drain Current | 950 mA | — |
| 패키지 | NI-780H-2L (ceramic flange) | — |
| 실장 유형 | Surface Mount / bolt-down flange | Chassis-mount / flange-bolt |
| Maximum Power Dissipation (Abs) | 388 W | — |
| Operating Mode | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) | — |
| Terminal Position | Dual | — |
| Lead Free Status | [DATA_NEEDED: RoHS/lead-free explicit statement] | Lead free (per datasheet) |
| RoHS 상태 | [DATA_NEEDED: explicit RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRFG35010NT1 |
| Drain-Source Voltage Rating (Vds) | — | 15 V |
| Continuous Drain Current Rating | — | 2.9 A |
| Operating Frequency | — | 3.55 GHz |
| Frequency Range | — | 1.8 GHz to 3.6 GHz |
| Test Voltage | — | 12 V |
| Test Current (quiescent) | — | 180 mA |
| Associated Power Gain | — | 10 dB at 3.55 GHz |
| Output Power | — | 9 W at 3.55 GHz |
| Class of Operation | — | Class AB linear |
| 패키지 / 케이스 | — | PLD-1.5 flanged ceramic |
| Supplier Device Package | — | PLD-1.5 |