MRF6S27015GNR1 vs MRF6S27015NR1 Comparison

Detailed side-by-side comparison of MRF6S27015GNR1 by NXP Semiconductors and MRF6S27015NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF6S27015GNR1 MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 ✓ Active
NXP Semiconductors
MRF6S27015NR1 MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP

MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP

MRF6S27015NR1 ✓ Active

Specification Comparison

Parameter MRF6S27015GNR1 MRF6S27015NR1
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.50 $9.35
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Part Type RF Power MOSFET, N-Channel, Lateral —
Technology HV6 Lateral N-Channel Enhancement-Mode MOSFET —
Package TO-270-2 (Case 1265-09, Style 1) Gull-Wing —
Operating Frequency Range 2300 MHz to 2700 MHz —
Drain-Source Voltage (VDSS) 68 V (max) —
Operating Drain Voltage (Vdd) 28 V (typical) —
Output Power (Avg, W-CDMA) 3 W 3 W
Power Gain (Typ, 2.6 GHz) 14 dB —
Test Quiescent Current (IDQ) 160 mA —
Drain Efficiency (Typ) [DATA_NEEDED: drain efficiency %] —
Channel Temperature (Tch) [DATA_NEEDED: max channel temp C] —
Thermal Resistance (Rth) [DATA_NEEDED: junction-to-case thermal resistance C/W] —
Configuration Single-ended, common-source —
Mounting Type Surface Mount (gull-wing leads) Surface Mount
Target Waveform Single-carrier W-CDMA, LTE, WiMAX —
RoHS Status Compliant Compliant (RoHS-compliant PPI suffix where applicable)
Lead-Free Yes —
MSL Level [DATA_NEEDED: MSL rating] —
Part Number — MRF6S27015NR1
Device Type — RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode
Frequency Range — 2300 to 2700 MHz
Typical Test Frequency — 2600 MHz
Drain-Source Voltage (Max, VDS) — 68 V
Operating Drain Voltage (VDD) — 28 V
Power Gain (Typical at 2.6 GHz) — 14 dB
Quiescent Drain Current (IDQ) — 160 mA
Drain Efficiency (Typical) — [DATA_NEEDED: % value at rated Pout]
Package / Case — TO-270-2 (Case 1265-09, Style 1) over-molded plastic, gull-wing leads
VSWR Ruggedness — 10:1 at rated operating voltage
Lead-Free Finish — Yes (NiPdAu lead-frame and matte tin leads)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL per J-STD-020 rating]
Operating Junction Temperature — -40 C to +150 C (per datasheet)

Datasheets & Resources

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