MRF6S27015GNR1 vs MRF6S27015NR1 Comparação
Comparação detalhada lado a lado de MRF6S27015GNR1 por NXP Semiconductors e MRF6S27015NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRF6S27015GNR1 | MRF6S27015NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $9,50 | $9,35 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Type | RF Power MOSFET, N-Channel, Lateral | — |
| Technology | HV6 Lateral N-Channel Enhancement-Mode MOSFET | — |
| Encapsulamento | TO-270-2 (Case 1265-09, Style 1) Gull-Wing | — |
| Operating Frequency Range | 2300 MHz to 2700 MHz | — |
| Drain-Source Voltage (VDSS) | 68 V (max) | — |
| Operating Drain Voltage (Vdd) | 28 V (typical) | — |
| Output Power (Avg, W-CDMA) | 3 W | 3 W |
| Power Gain (Typ, 2.6 GHz) | 14 dB | — |
| Test Quiescent Current (IDQ) | 160 mA | — |
| Drain Efficiency (Typ) | [DATA_NEEDED: drain efficiency %] | — |
| Channel Temperature (Tch) | [DATA_NEEDED: max channel temp C] | — |
| Thermal Resistance (Rth) | [DATA_NEEDED: junction-to-case thermal resistance C/W] | — |
| Configuration | Single-ended, common-source | — |
| Tipo de montagem | Surface Mount (gull-wing leads) | Surface Mount |
| Target Waveform | Single-carrier W-CDMA, LTE, WiMAX | — |
| Status RoHS | Compliant | Compliant (RoHS-compliant PPI suffix where applicable) |
| Lead-Free | Yes | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | — |
| Part Number | — | MRF6S27015NR1 |
| Device Type | — | RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode |
| Frequency Range | — | 2300 to 2700 MHz |
| Typical Test Frequency | — | 2600 MHz |
| Drain-Source Voltage (Max, VDS) | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V |
| Power Gain (Typical at 2.6 GHz) | — | 14 dB |
| Quiescent Drain Current (IDQ) | — | 160 mA |
| Drain Efficiency (Typical) | — | [DATA_NEEDED: % value at rated Pout] |
| Encapsulamento / Caixa | — | TO-270-2 (Case 1265-09, Style 1) over-molded plastic, gull-wing leads |
| VSWR Ruggedness | — | 10:1 at rated operating voltage |
| Lead-Free Finish | — | Yes (NiPdAu lead-frame and matte tin leads) |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL per J-STD-020 rating] |
| Temperatura de junção de operação | — | -40 C to +150 C (per datasheet) |