MRF6S27015GNR1 vs MRF6S27015NR1 Comparaison
Comparaison détaillée côte à côte de MRF6S27015GNR1 par NXP Semiconductors et MRF6S27015NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF6S27015GNR1 | MRF6S27015NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,50 | $9,35 |
| Manufacturer | NXP Semiconductors | NXP Semiconductors (formerly Freescale) |
| Part Type | RF Power MOSFET, N-Channel, Lateral | — |
| Technology | HV6 Lateral N-Channel Enhancement-Mode MOSFET | — |
| Boîtier | TO-270-2 (Case 1265-09, Style 1) Gull-Wing | — |
| Operating Frequency Range | 2300 MHz to 2700 MHz | — |
| Drain-Source Voltage (VDSS) | 68 V (max) | — |
| Operating Drain Voltage (Vdd) | 28 V (typical) | — |
| Output Power (Avg, W-CDMA) | 3 W | 3 W |
| Power Gain (Typ, 2.6 GHz) | 14 dB | — |
| Test Quiescent Current (IDQ) | 160 mA | — |
| Drain Efficiency (Typ) | [DATA_NEEDED: drain efficiency %] | — |
| Channel Temperature (Tch) | [DATA_NEEDED: max channel temp C] | — |
| Thermal Resistance (Rth) | [DATA_NEEDED: junction-to-case thermal resistance C/W] | — |
| Configuration | Single-ended, common-source | — |
| Type de montage | Surface Mount (gull-wing leads) | Surface Mount |
| Target Waveform | Single-carrier W-CDMA, LTE, WiMAX | — |
| Statut RoHS | Compliant | Compliant (RoHS-compliant PPI suffix where applicable) |
| Lead-Free | Yes | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Part Number | — | MRF6S27015NR1 |
| Device Type | — | RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode |
| Frequency Range | — | 2300 to 2700 MHz |
| Typical Test Frequency | — | 2600 MHz |
| Drain-Source Voltage (Max, VDS) | — | 68 V |
| Operating Drain Voltage (VDD) | — | 28 V |
| Power Gain (Typical at 2.6 GHz) | — | 14 dB |
| Quiescent Drain Current (IDQ) | — | 160 mA |
| Drain Efficiency (Typical) | — | [DATA_NEEDED: % value at rated Pout] |
| Boîtier / Format | — | TO-270-2 (Case 1265-09, Style 1) over-molded plastic, gull-wing leads |
| VSWR Ruggedness | — | 10:1 at rated operating voltage |
| Lead-Free Finish | — | Yes (NiPdAu lead-frame and matte tin leads) |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: MSL per J-STD-020 rating] |
| Température de jonction en fonctionnement | — | -40 C to +150 C (per datasheet) |