MRF6S27015GNR1 vs MRF6S27015NR1 Сравнение

Подробное сравнение бок о бок MRF6S27015GNR1 от NXP Semiconductors и MRF6S27015NR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.

NXP Semiconductors
MRF6S27015GNR1 MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 ✓ Активен
NXP Semiconductors
MRF6S27015NR1 MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP

MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP

MRF6S27015NR1 ✓ Активен

Сравнение характеристик

Параметр MRF6S27015GNR1 MRF6S27015NR1
Бренд NXP Semiconductors NXP Semiconductors
Категория MOSFETs MOSFETs
Статус жизненного цикла Активен Активен
Наличие In Stock In Stock
Цена за единицу (USD) $9,50 $9,35
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Part Type RF Power MOSFET, N-Channel, Lateral —
Technology HV6 Lateral N-Channel Enhancement-Mode MOSFET —
Корпус TO-270-2 (Case 1265-09, Style 1) Gull-Wing —
Operating Frequency Range 2300 MHz to 2700 MHz —
Drain-Source Voltage (VDSS) 68 V (max) —
Operating Drain Voltage (Vdd) 28 V (typical) —
Output Power (Avg, W-CDMA) 3 W 3 W
Power Gain (Typ, 2.6 GHz) 14 dB —
Test Quiescent Current (IDQ) 160 mA —
Drain Efficiency (Typ) [DATA_NEEDED: drain efficiency %] —
Channel Temperature (Tch) [DATA_NEEDED: max channel temp C] —
Thermal Resistance (Rth) [DATA_NEEDED: junction-to-case thermal resistance C/W] —
Configuration Single-ended, common-source —
Тип монтажа Surface Mount (gull-wing leads) Surface Mount
Target Waveform Single-carrier W-CDMA, LTE, WiMAX —
Статус RoHS Compliant Compliant (RoHS-compliant PPI suffix where applicable)
Lead-Free Yes —
Уровень MSL [DATA_NEEDED: MSL rating] —
Part Number — MRF6S27015NR1
Device Type — RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode
Frequency Range — 2300 to 2700 MHz
Typical Test Frequency — 2600 MHz
Drain-Source Voltage (Max, VDS) — 68 V
Operating Drain Voltage (VDD) — 28 V
Power Gain (Typical at 2.6 GHz) — 14 dB
Quiescent Drain Current (IDQ) — 160 mA
Drain Efficiency (Typical) — [DATA_NEEDED: % value at rated Pout]
Корпус / Типоразмер — TO-270-2 (Case 1265-09, Style 1) over-molded plastic, gull-wing leads
VSWR Ruggedness — 10:1 at rated operating voltage
Lead-Free Finish — Yes (NiPdAu lead-frame and matte tin leads)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL per J-STD-020 rating]
Рабочая температура перехода — -40 C to +150 C (per datasheet)

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