MRF6S27015GNR1 vs MRF6S27015NR1 Vergleich

Detaillierter Direktvergleich von MRF6S27015GNR1 von NXP Semiconductors und MRF6S27015NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S27015GNR1 MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 - 3W 2.6GHz 28V RF Power MOSFET | NXP

MRF6S27015GNR1 ✓ Aktiv
NXP Semiconductors
MRF6S27015NR1 MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP

MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP

MRF6S27015NR1 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6S27015GNR1 MRF6S27015NR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $9,50 $9,35
Manufacturer NXP Semiconductors NXP Semiconductors (formerly Freescale)
Part Type RF Power MOSFET, N-Channel, Lateral —
Technology HV6 Lateral N-Channel Enhancement-Mode MOSFET —
Gehäuse TO-270-2 (Case 1265-09, Style 1) Gull-Wing —
Operating Frequency Range 2300 MHz to 2700 MHz —
Drain-Source Voltage (VDSS) 68 V (max) —
Operating Drain Voltage (Vdd) 28 V (typical) —
Output Power (Avg, W-CDMA) 3 W 3 W
Power Gain (Typ, 2.6 GHz) 14 dB —
Test Quiescent Current (IDQ) 160 mA —
Drain Efficiency (Typ) [DATA_NEEDED: drain efficiency %] —
Channel Temperature (Tch) [DATA_NEEDED: max channel temp C] —
Thermal Resistance (Rth) [DATA_NEEDED: junction-to-case thermal resistance C/W] —
Configuration Single-ended, common-source —
Montageart Surface Mount (gull-wing leads) Surface Mount
Target Waveform Single-carrier W-CDMA, LTE, WiMAX —
RoHS-Status Compliant Compliant (RoHS-compliant PPI suffix where applicable)
Lead-Free Yes —
MSL-Level [DATA_NEEDED: MSL rating] —
Part Number — MRF6S27015NR1
Device Type — RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode
Frequency Range — 2300 to 2700 MHz
Typical Test Frequency — 2600 MHz
Drain-Source Voltage (Max, VDS) — 68 V
Operating Drain Voltage (VDD) — 28 V
Power Gain (Typical at 2.6 GHz) — 14 dB
Quiescent Drain Current (IDQ) — 160 mA
Drain Efficiency (Typical) — [DATA_NEEDED: % value at rated Pout]
Gehäuse / Bauform — TO-270-2 (Case 1265-09, Style 1) over-molded plastic, gull-wing leads
VSWR Ruggedness — 10:1 at rated operating voltage
Lead-Free Finish — Yes (NiPdAu lead-frame and matte tin leads)
MSL (Moisture Sensitivity Level) — [DATA_NEEDED: MSL per J-STD-020 rating]
Betriebs-Sperrschichttemperatur — -40 C to +150 C (per datasheet)

Datenblätter & Ressourcen

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