MRF7S19120NR1 vs MRF8S21200HSR6 Comparison

Detailed side-by-side comparison of MRF7S19120NR1 by NXP Semiconductors and MRF8S21200HSR6 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF7S19120NR1 MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 ✓ Active
NXP Semiconductors
MRF8S21200HSR6 MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP

MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP

MRF8S21200HSR6 ✓ Active

Specification Comparison

Parameter MRF7S19120NR1 MRF8S21200HSR6
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $73.00 $96.75
Transistor Type LDMOS, N-Channel Enhancement-Mode Lateral LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET
Technology RF Power MOSFET (Gen7 HV8 LDMOS) Silicon LDMOS (lateral double-diffused MOSFET)
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Avg, W-CDMA) 36 W —
Drain-Source Voltage (Vds max) 65 V (rated) —
Test Supply Voltage (Vdd) 28 V —
Test Quiescent Current (Idq) 1.2 A —
Power Gain (typ) 18 dB at 1.99 GHz —
Operating Class Class AB, Class C —
Package TO-270 WB-4 (overmolded plastic, 4-lead) —
Mounting Style Surface Mount / Flange Mount —
Number of Pins 5 (per Freescale/NXP datasheet) —
Lead Free Status Lead Free per datasheet Lead Free
Target Modulation W-CDMA, CDMA, multi-carrier GSM W-CDMA, LTE, TD-LTE
Application CDMA / W-CDMA base station final-stage PA —
Frequency Band — 2110 MHz to 2170 MHz
Output Power (Avg, W-CDMA/LTE) — 48 W at 28 V
Power Gain — 18.1 dB
Test Voltage — 28 V
Test Current (Quiescent) — 1.4 A
Minimum Breakdown Voltage (Drain-Source) — 65 V
Maximum Junction Temperature — 225 C
Mounting Configuration — Surface Mount (NI-1230HS ceramic package)
Application Class — Class AB, Class C (cellular base station modulation)
Peak Reflow Temperature — 260 C
Number of Elements / Configuration — Dual, Common Source, 2 Elements

Datasheets & Resources

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