MRF7S19120NR1 vs MRF8S21200HSR6 对比
详细并排对比 MRF7S19120NR1 出自 NXP Semiconductors 和 MRF8S21200HSR6 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRF7S19120NR1 | MRF8S21200HSR6 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $73.00 | $96.75 |
| 晶体管类型 | LDMOS, N-Channel Enhancement-Mode Lateral | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET |
| Technology | RF Power MOSFET (Gen7 HV8 LDMOS) | Silicon LDMOS (lateral double-diffused MOSFET) |
| Frequency Range | 1930 MHz to 1990 MHz | — |
| Output Power (Avg, W-CDMA) | 36 W | — |
| Drain-Source Voltage (Vds max) | 65 V (rated) | — |
| Test Supply Voltage (Vdd) | 28 V | — |
| Test Quiescent Current (Idq) | 1.2 A | — |
| Power Gain (typ) | 18 dB at 1.99 GHz | — |
| Operating Class | Class AB, Class C | — |
| 封装 | TO-270 WB-4 (overmolded plastic, 4-lead) | — |
| 安装方式 | Surface Mount / Flange Mount | — |
| 引脚数 | 5 (per Freescale/NXP datasheet) | — |
| Lead Free Status | Lead Free per datasheet | Lead Free |
| Target Modulation | W-CDMA, CDMA, multi-carrier GSM | W-CDMA, LTE, TD-LTE |
| Application | CDMA / W-CDMA base station final-stage PA | — |
| Frequency Band | — | 2110 MHz to 2170 MHz |
| Output Power (Avg, W-CDMA/LTE) | — | 48 W at 28 V |
| Power Gain | — | 18.1 dB |
| Test Voltage | — | 28 V |
| Test Current (Quiescent) | — | 1.4 A |
| Minimum Breakdown Voltage (Drain-Source) | — | 65 V |
| Maximum Junction Temperature | — | 225 C |
| Mounting Configuration | — | Surface Mount (NI-1230HS ceramic package) |
| Application Class | — | Class AB, Class C (cellular base station modulation) |
| Peak Reflow Temperature | — | 260 C |
| Number of Elements / Configuration | — | Dual, Common Source, 2 Elements |