MRF7S19120NR1 vs MRF8S21200HSR6 Vergleich

Detaillierter Direktvergleich von MRF7S19120NR1 von NXP Semiconductors und MRF8S21200HSR6 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF7S19120NR1 MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 ✓ Aktiv
NXP Semiconductors
MRF8S21200HSR6 MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP

MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP

MRF8S21200HSR6 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF7S19120NR1 MRF8S21200HSR6
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $73,00 $96,75
Transistortyp LDMOS, N-Channel Enhancement-Mode Lateral LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET
Technology RF Power MOSFET (Gen7 HV8 LDMOS) Silicon LDMOS (lateral double-diffused MOSFET)
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Avg, W-CDMA) 36 W —
Drain-Source Voltage (Vds max) 65 V (rated) —
Test Supply Voltage (Vdd) 28 V —
Test Quiescent Current (Idq) 1.2 A —
Power Gain (typ) 18 dB at 1.99 GHz —
Operating Class Class AB, Class C —
Gehäuse TO-270 WB-4 (overmolded plastic, 4-lead) —
Montagestil Surface Mount / Flange Mount —
Anzahl der Pins 5 (per Freescale/NXP datasheet) —
Lead Free Status Lead Free per datasheet Lead Free
Target Modulation W-CDMA, CDMA, multi-carrier GSM W-CDMA, LTE, TD-LTE
Application CDMA / W-CDMA base station final-stage PA —
Frequency Band — 2110 MHz to 2170 MHz
Output Power (Avg, W-CDMA/LTE) — 48 W at 28 V
Power Gain — 18.1 dB
Test Voltage — 28 V
Test Current (Quiescent) — 1.4 A
Minimum Breakdown Voltage (Drain-Source) — 65 V
Maximum Junction Temperature — 225 C
Mounting Configuration — Surface Mount (NI-1230HS ceramic package)
Application Class — Class AB, Class C (cellular base station modulation)
Peak Reflow Temperature — 260 C
Number of Elements / Configuration — Dual, Common Source, 2 Elements

Datenblätter & Ressourcen

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