MRF7S19120NR1 vs MRF8S21200HSR6 Comparação

Comparação detalhada lado a lado de MRF7S19120NR1 por NXP Semiconductors e MRF8S21200HSR6 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF7S19120NR1 MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 - 36W RF Power LDMOS, 1930-1990 MHz | NXP

MRF7S19120NR1 ✓ Ativo
NXP Semiconductors
MRF8S21200HSR6 MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP

MRF8S21200HSR6 - 48W RF Power LDMOS, 2110-2170 MHz | NXP

MRF8S21200HSR6 ✓ Ativo

Comparação de especificações

Parâmetro MRF7S19120NR1 MRF8S21200HSR6
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $73,00 $96,75
Tipo de transistor LDMOS, N-Channel Enhancement-Mode Lateral LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET
Technology RF Power MOSFET (Gen7 HV8 LDMOS) Silicon LDMOS (lateral double-diffused MOSFET)
Frequency Range 1930 MHz to 1990 MHz —
Output Power (Avg, W-CDMA) 36 W —
Drain-Source Voltage (Vds max) 65 V (rated) —
Test Supply Voltage (Vdd) 28 V —
Test Quiescent Current (Idq) 1.2 A —
Power Gain (typ) 18 dB at 1.99 GHz —
Operating Class Class AB, Class C —
Encapsulamento TO-270 WB-4 (overmolded plastic, 4-lead) —
Estilo de montagem Surface Mount / Flange Mount —
Número de pinos 5 (per Freescale/NXP datasheet) —
Lead Free Status Lead Free per datasheet Lead Free
Target Modulation W-CDMA, CDMA, multi-carrier GSM W-CDMA, LTE, TD-LTE
Application CDMA / W-CDMA base station final-stage PA —
Frequency Band — 2110 MHz to 2170 MHz
Output Power (Avg, W-CDMA/LTE) — 48 W at 28 V
Power Gain — 18.1 dB
Test Voltage — 28 V
Test Current (Quiescent) — 1.4 A
Minimum Breakdown Voltage (Drain-Source) — 65 V
Maximum Junction Temperature — 225 C
Mounting Configuration — Surface Mount (NI-1230HS ceramic package)
Application Class — Class AB, Class C (cellular base station modulation)
Peak Reflow Temperature — 260 C
Number of Elements / Configuration — Dual, Common Source, 2 Elements

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