MRF7S21080HR3 vs MRF7S21080HSR3 Comparison

Detailed side-by-side comparison of MRF7S21080HR3 by NXP Semiconductors and MRF7S21080HSR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRF7S21080HR3 MRF7S21080HR3 - 22W, 2110-2170 MHz RF Power LDMOS | NXP

MRF7S21080HR3 - 22W, 2110-2170 MHz RF Power LDMOS | NXP

MRF7S21080HR3 ✓ Active
NXP Semiconductors
MRF7S21080HSR3 MRF7S21080HSR3 - 22W RF Power MOSFET 2.1GHz NI-780S | NXP

MRF7S21080HSR3 - 22W RF Power MOSFET 2.1GHz NI-780S | NXP

MRF7S21080HSR3 ✓ Active

Specification Comparison

Parameter MRF7S21080HR3 MRF7S21080HSR3
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $24.95 $71.50
Transistor Type LDMOS, N-Channel Enhancement-Mode Lateral N-Channel RF Power MOSFET
Technology RF Power Field Effect Transistor (lateral MOSFET) Lateral MOSFET, enhancement-mode
Frequency Band 2110 MHz to 2170 MHz —
Test Frequency 2.11 GHz to 2.17 GHz 2167.5 MHz
Rated Drain Voltage 65 V —
Test Supply Voltage (VDD) 28 V —
Quiescent Current (IDQ) 800 mA —
Output Power (Avg, W-CDMA) 22 W Avg. —
Power Gain 18 dB 18 dB
Drain Efficiency (typical) 32 % —
ACPR @ 5 MHz Offset -38 dBc in 3.84 MHz channel —
Output Signal PAR 6.5 dB at 0.01% CCDF —
Input Signal PAR 7.5 dB at 0.01% CCDF —
Channel Bandwidth 3.84 MHz 3.84 MHz
Package NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) NI-780S (NI-780HS) ceramic-metal sealed
Mounting Type Surface Mount / Flange Mount Surface Mount
Application CDMA / W-CDMA / LTE base-station power amplifiers —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF7S21080HSR3
Operating Frequency — 2110 MHz to 2170 MHz
Drain-Source Voltage (VDS max) — 65 V
Operating Drain Voltage (VDD) — 28 V
Quiescent Drain Current (IDQ) — 800 mA
Output Power (Average, W-CDMA) — 22 W
Drain Efficiency — 32%
ACPR at 5 MHz Offset — -38 dBc
Device Output Signal PAR — 6.5 dB at 0.01% CCDF
Configuration — Single
Terminal Form — Flat
Package Body Material — Ceramic, metal-sealed cofired
Lead-Free — Yes
RoHS Status — Compliant (per NXP product page)

Datasheets & Resources

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