MRF7S21080HR3 vs MRF7S21080HSR3 비교
다음의 상세 나란히 비교: MRF7S21080HR3 제조: NXP Semiconductors 및 MRF7S21080HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF7S21080HR3 | MRF7S21080HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $24.95 | $71.50 |
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode | Lateral N-Channel RF Power MOSFET |
| Technology | RF Power Field Effect Transistor (lateral MOSFET) | Lateral MOSFET, enhancement-mode |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.11 GHz to 2.17 GHz | 2167.5 MHz |
| Rated Drain Voltage | 65 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Current (IDQ) | 800 mA | — |
| Output Power (Avg, W-CDMA) | 22 W Avg. | — |
| Power Gain | 18 dB | 18 dB |
| Drain Efficiency (typical) | 32 % | — |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel | — |
| Output Signal PAR | 6.5 dB at 0.01% CCDF | — |
| Input Signal PAR | 7.5 dB at 0.01% CCDF | — |
| Channel Bandwidth | 3.84 MHz | 3.84 MHz |
| 패키지 | NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) | NI-780S (NI-780HS) ceramic-metal sealed |
| 실장 유형 | Surface Mount / Flange Mount | Surface Mount |
| Application | CDMA / W-CDMA / LTE base-station power amplifiers | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF7S21080HSR3 |
| Operating Frequency | — | 2110 MHz to 2170 MHz |
| Drain-Source Voltage (VDS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 800 mA |
| Output Power (Average, W-CDMA) | — | 22 W |
| Drain Efficiency | — | 32% |
| ACPR at 5 MHz Offset | — | -38 dBc |
| Device Output Signal PAR | — | 6.5 dB at 0.01% CCDF |
| Configuration | — | Single |
| Terminal Form | — | Flat |
| Package Body Material | — | Ceramic, metal-sealed cofired |
| Lead-Free | — | Yes |
| RoHS 상태 | — | Compliant (per NXP product page) |