MRF7S21080HR3 vs MRF7S21080HSR3 Comparaison
Comparaison détaillée côte à côte de MRF7S21080HR3 par NXP Semiconductors et MRF7S21080HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRF7S21080HR3 | MRF7S21080HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $24,95 | $71,50 |
| Type de transistor | LDMOS, N-Channel Enhancement-Mode | Lateral N-Channel RF Power MOSFET |
| Technology | RF Power Field Effect Transistor (lateral MOSFET) | Lateral MOSFET, enhancement-mode |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Test Frequency | 2.11 GHz to 2.17 GHz | 2167.5 MHz |
| Rated Drain Voltage | 65 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Current (IDQ) | 800 mA | — |
| Output Power (Avg, W-CDMA) | 22 W Avg. | — |
| Power Gain | 18 dB | 18 dB |
| Drain Efficiency (typical) | 32 % | — |
| ACPR @ 5 MHz Offset | -38 dBc in 3.84 MHz channel | — |
| Output Signal PAR | 6.5 dB at 0.01% CCDF | — |
| Input Signal PAR | 7.5 dB at 0.01% CCDF | — |
| Channel Bandwidth | 3.84 MHz | 3.84 MHz |
| Boîtier | NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) | NI-780S (NI-780HS) ceramic-metal sealed |
| Type de montage | Surface Mount / Flange Mount | Surface Mount |
| Application | CDMA / W-CDMA / LTE base-station power amplifiers | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MRF7S21080HSR3 |
| Operating Frequency | — | 2110 MHz to 2170 MHz |
| Drain-Source Voltage (VDS max) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 800 mA |
| Output Power (Average, W-CDMA) | — | 22 W |
| Drain Efficiency | — | 32% |
| ACPR at 5 MHz Offset | — | -38 dBc |
| Device Output Signal PAR | — | 6.5 dB at 0.01% CCDF |
| Configuration | — | Single |
| Terminal Form | — | Flat |
| Package Body Material | — | Ceramic, metal-sealed cofired |
| Lead-Free | — | Yes |
| Statut RoHS | — | Compliant (per NXP product page) |