MRF7S21080HR3 vs MRF7S21080HSR3 Vergleich

Detaillierter Direktvergleich von MRF7S21080HR3 von NXP Semiconductors und MRF7S21080HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF7S21080HR3 MRF7S21080HR3 - 22W, 2110-2170 MHz RF Power LDMOS | NXP

MRF7S21080HR3 - 22W, 2110-2170 MHz RF Power LDMOS | NXP

MRF7S21080HR3 ✓ Aktiv
NXP Semiconductors
MRF7S21080HSR3 MRF7S21080HSR3 - 22W RF Power MOSFET 2.1GHz NI-780S | NXP

MRF7S21080HSR3 - 22W RF Power MOSFET 2.1GHz NI-780S | NXP

MRF7S21080HSR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF7S21080HR3 MRF7S21080HSR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $24,95 $71,50
Transistortyp LDMOS, N-Channel Enhancement-Mode Lateral N-Channel RF Power MOSFET
Technology RF Power Field Effect Transistor (lateral MOSFET) Lateral MOSFET, enhancement-mode
Frequency Band 2110 MHz to 2170 MHz —
Test Frequency 2.11 GHz to 2.17 GHz 2167.5 MHz
Rated Drain Voltage 65 V —
Test Supply Voltage (VDD) 28 V —
Quiescent Current (IDQ) 800 mA —
Output Power (Avg, W-CDMA) 22 W Avg. —
Power Gain 18 dB 18 dB
Drain Efficiency (typical) 32 % —
ACPR @ 5 MHz Offset -38 dBc in 3.84 MHz channel —
Output Signal PAR 6.5 dB at 0.01% CCDF —
Input Signal PAR 7.5 dB at 0.01% CCDF —
Channel Bandwidth 3.84 MHz 3.84 MHz
Gehäuse NI-780S-4S2S (NI-780, 3-pin ceramic, flange mount) NI-780S (NI-780HS) ceramic-metal sealed
Montageart Surface Mount / Flange Mount Surface Mount
Application CDMA / W-CDMA / LTE base-station power amplifiers —
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF7S21080HSR3
Operating Frequency — 2110 MHz to 2170 MHz
Drain-Source Voltage (VDS max) — 65 V
Operating Drain Voltage (VDD) — 28 V
Quiescent Drain Current (IDQ) — 800 mA
Output Power (Average, W-CDMA) — 22 W
Drain Efficiency — 32%
ACPR at 5 MHz Offset — -38 dBc
Device Output Signal PAR — 6.5 dB at 0.01% CCDF
Configuration — Single
Terminal Form — Flat
Package Body Material — Ceramic, metal-sealed cofired
Lead-Free — Yes
RoHS-Status — Compliant (per NXP product page)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern