MRFE6S9160HSR3 vs MRF377HR3 Comparison
Detailed side-by-side comparison of MRFE6S9160HSR3 by NXP Semiconductors and MRF377HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MRFE6S9160HSR3 | MRF377HR3 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRFE6S9160HSR3 | — |
| Transistor Type | LDMOS, N-Channel, Enhancement-Mode, Lateral | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| Drain-Source Breakdown Voltage | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 31% (typical at 35 W avg.) | [DATA_NEEDED: drain efficiency %] |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| Package | NI-780S (NI780HS) ceramic, bolted flange | NI-860C3 (ceramic flange) |
| Mounting Type | Through-hole / chassis mount with flange | Flange / Screw Mount (Surface Mount variant per HR3 suffix) |
| RoHS Status | [DATA_NEEDED: confirm via latest distributor listing] | — |
| Technology | HV6E (6th gen high-voltage LDMOS) | Lateral RF Power MOSFET (Silicon) |
| Frequency Range | — | 470 MHz to 860 MHz |
| Drain-Source Voltage (V DSS) | — | 65 V (max) |
| Operating Drain Voltage | — | 32 V (typical) |
| Continuous Output Power (P out) | — | 45 W (CW, push-pull) |
| Power Gain (G ps) | — | 18.2 dB (typical at 860 MHz) |
| Test Current | — | 2 A |
| Configuration | — | Push-Pull (internally matched) |
| Operating Temperature | — | -40 C to +200 C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Lead-Free / RoHS | — | Lead Free / RoHS Compliant |
| Case Connection | — | Source |
| Maximum Power Dissipation | — | 648 W (per Partstack listing) |