MRFE6S9160HSR3 vs MRF377HR3 Comparação
Comparação detalhada lado a lado de MRFE6S9160HSR3 por NXP Semiconductors e MRF377HR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MRFE6S9160HSR3 | MRF377HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRFE6S9160HSR3 | — |
| Tipo de transistor | LDMOS, N-Channel, Enhancement-Mode, Lateral | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| Tensão de ruptura dreno-fonte | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 31% (typical at 35 W avg.) | [DATA_NEEDED: drain efficiency %] |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| Encapsulamento | NI-780S (NI780HS) ceramic, bolted flange | NI-860C3 (ceramic flange) |
| Tipo de montagem | Through-hole / chassis mount with flange | Flange / Screw Mount (Surface Mount variant per HR3 suffix) |
| Status RoHS | [DATA_NEEDED: confirm via latest distributor listing] | — |
| Technology | HV6E (6th gen high-voltage LDMOS) | Lateral RF Power MOSFET (Silicon) |
| Frequency Range | — | 470 MHz to 860 MHz |
| Drain-Source Voltage (V DSS) | — | 65 V (max) |
| Operating Drain Voltage | — | 32 V (typical) |
| Continuous Output Power (P out) | — | 45 W (CW, push-pull) |
| Power Gain (G ps) | — | 18.2 dB (typical at 860 MHz) |
| Test Current | — | 2 A |
| Configuration | — | Push-Pull (internally matched) |
| Temperatura de operação | — | -40 C to +200 C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Lead-Free / RoHS | — | Lead Free / RoHS Compliant |
| Case Connection | — | Source |
| Maximum Power Dissipation | — | 648 W (per Partstack listing) |