MRFE6S9160HSR3 vs MRF377HR3 비교

다음의 상세 나란히 비교: MRFE6S9160HSR3 제조: NXP Semiconductors 및 MRF377HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MRFE6S9160HSR3 MRFE6S9160HSR3 - 160W RF Power LDMOS 880MHz | NXP

MRFE6S9160HSR3 - 160W RF Power LDMOS 880MHz | NXP

MRFE6S9160HSR3 ✓ 활성
NXP Semiconductors
MRF377HR3 MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP

MRF377HR3 - 45W 470-860MHz RF Power MOSFET | NXP

MRF377HR3 ✓ 활성

사양 비교

파라미터 MRFE6S9160HSR3 MRF377HR3
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Number MRFE6S9160HSR3 —
트랜지스터 유형 LDMOS, N-Channel, Enhancement-Mode, Lateral N-Channel Enhancement-Mode Lateral MOSFET
Drain-Source Voltage (VDSS) 66 V (rated) —
드레인-소스 항복 전압 [DATA_NEEDED: V(BR)DSS minimum] —
Operating Drain Voltage (VDD) 28 V (typical bias) —
Continuous Drain Current (ID) 10 uA [leakage spec context, ID max [DATA_NEEDED]] —
Quiescent Current (IDQ) 1200 mA —
Operating Frequency Range 865 MHz to 960 MHz —
Test Frequency 880 MHz —
Output Power (Pout) Avg. 35 W (under N-CDMA drive, 9.8 dB PAR) —
Output Power Peak 160 W (peak envelope) —
Power Gain 21 dB (typical at 880 MHz) —
Drain Efficiency 31% (typical at 35 W avg.) [DATA_NEEDED: drain efficiency %]
ACPR at 750 kHz Offset -46.8 dBc —
패키지 NI-780S (NI780HS) ceramic, bolted flange NI-860C3 (ceramic flange)
실장 유형 Through-hole / chassis mount with flange Flange / Screw Mount (Surface Mount variant per HR3 suffix)
RoHS 상태 [DATA_NEEDED: confirm via latest distributor listing] —
Technology HV6E (6th gen high-voltage LDMOS) Lateral RF Power MOSFET (Silicon)
Frequency Range — 470 MHz to 860 MHz
Drain-Source Voltage (V DSS) — 65 V (max)
Operating Drain Voltage — 32 V (typical)
Continuous Output Power (P out) — 45 W (CW, push-pull)
Power Gain (G ps) — 18.2 dB (typical at 860 MHz)
Test Current — 2 A
Configuration — Push-Pull (internally matched)
동작 온도 — -40 C to +200 C (junction)
Storage Temperature — [DATA_NEEDED: storage temperature range]
Lead-Free / RoHS — Lead Free / RoHS Compliant
Case Connection — Source
Maximum Power Dissipation — 648 W (per Partstack listing)

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