MRFE6S9160HSR3 vs MRF377HR3 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MRFE6S9160HSR3 disebabkan oleh NXP Semiconductors dan MRF377HR3 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MRFE6S9160HSR3 | MRF377HR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRFE6S9160HSR3 | — |
| Jenis Transistor | LDMOS, N-Channel, Enhancement-Mode, Lateral | N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| Tegangan Pemecah Daya Kumpal-Sumber | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | — |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 31% (typical at 35 W avg.) | [DATA_NEEDED: drain efficiency %] |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| Kemasan | NI-780S (NI780HS) ceramic, bolted flange | NI-860C3 (ceramic flange) |
| Jenis Pemasangan | Through-hole / chassis mount with flange | Flange / Screw Mount (Surface Mount variant per HR3 suffix) |
| Status RoHS | [DATA_NEEDED: confirm via latest distributor listing] | — |
| Technology | HV6E (6th gen high-voltage LDMOS) | Lateral RF Power MOSFET (Silicon) |
| Frequency Range | — | 470 MHz to 860 MHz |
| Drain-Source Voltage (V DSS) | — | 65 V (max) |
| Operating Drain Voltage | — | 32 V (typical) |
| Continuous Output Power (P out) | — | 45 W (CW, push-pull) |
| Power Gain (G ps) | — | 18.2 dB (typical at 860 MHz) |
| Test Current | — | 2 A |
| Configuration | — | Push-Pull (internally matched) |
| Suhu Operasi | — | -40 C to +200 C (junction) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Lead-Free / RoHS | — | Lead Free / RoHS Compliant |
| Case Connection | — | Source |
| Maximum Power Dissipation | — | 648 W (per Partstack listing) |