MRFG35010NT1 vs MRF6S21100HR3 Comparison

Detailed side-by-side comparison of MRFG35010NT1 by NXP Semiconductors and MRF6S21100HR3 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete
NXP Semiconductors
MRF6S21100HR3 MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 ✓ Active

Specification Comparison

Parameter MRFG35010NT1 MRF6S21100HR3
Brand NXP Semiconductors NXP Semiconductors
Category MOSFETs MOSFETs
Lifecycle Status Obsolete Active
Stock Status In Stock In Stock
Unit Price (USD) $25.95 $38.95
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Part Number MRFG35010NT1 —
Transistor Type GaAs pHEMT RF Power FET LDMOS (N-Channel Enhancement-Mode Lateral MOSFET)
Drain-Source Voltage Rating (Vds) 15 V —
Continuous Drain Current Rating 2.9 A —
Operating Frequency 3.55 GHz —
Frequency Range 1.8 GHz to 3.6 GHz —
Test Voltage 12 V —
Test Current (quiescent) 180 mA —
Associated Power Gain 10 dB at 3.55 GHz —
Output Power 9 W at 3.55 GHz —
Configuration Unmatched, common source Single
Class of Operation Class AB linear —
Package / Case PLD-1.5 flanged ceramic —
Supplier Device Package PLD-1.5 —
Mounting Type Chassis-mount / flange-bolt Surface Mount / bolt-down flange
Lead Free Status Lead free (per datasheet) [DATA_NEEDED: RoHS/lead-free explicit statement]
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: explicit RoHS compliance statement]
Frequency Band — 2.11 GHz to 2.17 GHz
Output Power (Average) — 23 W (W-CDMA, CW equivalent ~100 W PEP)
Power Gain (Typ) — 15.9 dB at 2.14 GHz
Drain-Source Voltage Rating (VDS max) — 68 V
Test Supply Voltage (VDD) — 28 V
Quiescent Drain Current (IDQ) — 950 mA
Test Drain Current — 950 mA
Package — NI-780H-2L (ceramic flange)
Maximum Power Dissipation (Abs) — 388 W
Operating Mode — Class AB (PCN/PCS/cellular, WLL, TD-SCDMA)
Terminal Position — Dual

Datasheets & Resources

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