MRFG35010NT1 vs MRF6S21100HR3 Comparaison
Comparaison détaillée côte à côte de MRFG35010NT1 par NXP Semiconductors et MRF6S21100HR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MRFG35010NT1 | MRF6S21100HR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,95 | $38,95 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRFG35010NT1 | — |
| Type de transistor | GaAs pHEMT RF Power FET | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Drain-Source Voltage Rating (Vds) | 15 V | — |
| Continuous Drain Current Rating | 2.9 A | — |
| Operating Frequency | 3.55 GHz | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | — |
| Test Voltage | 12 V | — |
| Test Current (quiescent) | 180 mA | — |
| Associated Power Gain | 10 dB at 3.55 GHz | — |
| Output Power | 9 W at 3.55 GHz | — |
| Configuration | Unmatched, common source | Single |
| Class of Operation | Class AB linear | — |
| Boîtier / Format | PLD-1.5 flanged ceramic | — |
| Supplier Device Package | PLD-1.5 | — |
| Type de montage | Chassis-mount / flange-bolt | Surface Mount / bolt-down flange |
| Lead Free Status | Lead free (per datasheet) | [DATA_NEEDED: RoHS/lead-free explicit statement] |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: explicit RoHS compliance statement] |
| Frequency Band | — | 2.11 GHz to 2.17 GHz |
| Output Power (Average) | — | 23 W (W-CDMA, CW equivalent ~100 W PEP) |
| Power Gain (Typ) | — | 15.9 dB at 2.14 GHz |
| Drain-Source Voltage Rating (VDS max) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 950 mA |
| Test Drain Current | — | 950 mA |
| Boîtier | — | NI-780H-2L (ceramic flange) |
| Maximum Power Dissipation (Abs) | — | 388 W |
| Operating Mode | — | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) |
| Terminal Position | — | Dual |