MRFG35010NT1 vs MRF6S21100HR3 비교
다음의 상세 나란히 비교: MRFG35010NT1 제조: NXP Semiconductors 및 MRF6S21100HR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRFG35010NT1 | MRF6S21100HR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $25.95 | $38.95 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRFG35010NT1 | — |
| 트랜지스터 유형 | GaAs pHEMT RF Power FET | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Drain-Source Voltage Rating (Vds) | 15 V | — |
| Continuous Drain Current Rating | 2.9 A | — |
| Operating Frequency | 3.55 GHz | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | — |
| Test Voltage | 12 V | — |
| Test Current (quiescent) | 180 mA | — |
| Associated Power Gain | 10 dB at 3.55 GHz | — |
| Output Power | 9 W at 3.55 GHz | — |
| Configuration | Unmatched, common source | Single |
| Class of Operation | Class AB linear | — |
| 패키지 / 케이스 | PLD-1.5 flanged ceramic | — |
| Supplier Device Package | PLD-1.5 | — |
| 실장 유형 | Chassis-mount / flange-bolt | Surface Mount / bolt-down flange |
| Lead Free Status | Lead free (per datasheet) | [DATA_NEEDED: RoHS/lead-free explicit statement] |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: explicit RoHS compliance statement] |
| Frequency Band | — | 2.11 GHz to 2.17 GHz |
| Output Power (Average) | — | 23 W (W-CDMA, CW equivalent ~100 W PEP) |
| Power Gain (Typ) | — | 15.9 dB at 2.14 GHz |
| Drain-Source Voltage Rating (VDS max) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 950 mA |
| Test Drain Current | — | 950 mA |
| 패키지 | — | NI-780H-2L (ceramic flange) |
| Maximum Power Dissipation (Abs) | — | 388 W |
| Operating Mode | — | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) |
| Terminal Position | — | Dual |