MT40A1G8WE-075E vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of MT40A1G8WE-075E by Micron Technology and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A1G8WE-075E
MT40A1G8WE-075E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MT40A1G8WE-075E β ActiveSamsung Electronics
K4A8G085WC-BIWE
K4A8G085WC-BIWE - 8Gb DDR4-3200 1Gx8 DRAM | Samsung
K4A8G085WC-BIWE β ActiveSpecification Comparison
| Parameter | MT40A1G8WE-075E | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.90 | $6.29 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit (1G x 8) | β |
| Data Rate | 2666 MT/s (1.33 GHz) | 3200 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V Β±60mV | β |
| VPP Supply | 2.5V (-125mV, +250mV) | β |
| Operating Temperature (TC) | -40Β°C to +105Β°C (industrial) | β |
| Refresh Time (8192 cycles) | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C | β |
| Package | 78-ball FBGA (8x12mm) | 78-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| I/O Type | 1.2V pseudo-open-drain | β |
| VREFDQ | On-die, internal, adjustable | β |
| Burst Length | 8 and 4 | 8 (BL8), 4 (BC4) |
| CAS Latency | Programmable | 22 (CL22) |
| RoHS Status | Compliant | Compliant |
| AEC-Q100 | Optional (AIT variant) | β |
| Density | β | 8 Gb |
| Organization | β | 1G x 8 |
| Supply Voltage (VDD) | β | 1.2 V |
| Supply Voltage (VDDQ) | β | 1.2 V |
| Operating Temperature Range | β | -40Β°C to +95Β°C |
| Interface | β | POD-12 |
| Refresh | β | Auto-refresh, self-refresh |
| Lead-Free | β | Yes |