MT40A256M16GE-083E vs H5AN4G6NBJR-PBC Comparison

Detailed side-by-side comparison of MT40A256M16GE-083E by Micron Technology and H5AN4G6NBJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A256M16GE-083E MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron

MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron

MT40A256M16GE-083E ✗ End of Life

Specification Comparison

Parameter MT40A256M16GE-083E H5AN4G6NBJR-PBC
Brand Micron Technology SK hynix
Category Memory ICs Memory ICs
Lifecycle Status End of Life Active
Stock Status In Stock In Stock
Unit Price (USD) $2.20 $6.60
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit —
Organization 256M x 16 256M x 16 (268435456 words x 16 bits)
Clock Frequency 1200 MHz (DDR4-2400) —
Supply Voltage 1.2 V —
Package 96-ball FBGA, 9 x 14 mm FBGA-96 (PBGA96), rectangular
Mounting Type Surface Mount Surface Mount
Interface Parallel DDR4 (double data rate, synchronous)
Technology CMOS DRAM —
ECCN EAR99 —
Country of Origin China —
Halogen Free Compliant —
Lead Free Yes —
Introduction Date August 2017 —
Lifecycle Obsolete / End of Life (per distributor cross-reference data) —
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range for -C grade]
CAS Latency [DATA_NEEDED: CAS latency at DDR4-2400] [DATA_NEEDED: CAS latency for PBC speed grade]
Refresh [DATA_NEEDED: refresh rate] —
Memory Density — 4 Gbit
Supply Voltage (VDD) — 1.2 V
Package Code — TFBGA
Number of Terminals — 96
Features — Auto self-refresh, data mask, asynchronous reset, dynamic ODT, ZQ calibration, write leveling, CRC
Data Rate / Speed Grade — [DATA_NEEDED: speed grade PBC data rate]
Process — CMOS
Lead-Free / Halogen-Free — Yes (per family datasheet, Lead-Free & Halogen-Free)
Temperature Grade — OTHER (per distributor listing)

Datasheets & Resources

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