MT40A2G8AG-062E vs H5ANAG8NAMR-UHC Comparison

Detailed side-by-side comparison of MT40A2G8AG-062E by Micron Technology and H5ANAG8NAMR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A2G8AG-062E MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E ✓ Active
SK hynix
H5ANAG8NAMR-UHC H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC ✓ Active

Specification Comparison

Parameter MT40A2G8AG-062E H5ANAG8NAMR-UHC
Brand Micron Technology SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.75 $2.15
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit 16 Gbit
Organization 2G x 8 2G x 8
Speed DDR4-3200 (3200 MT/s) —
Clock Frequency 1600 MHz —
Access Time (Clock Cycle Time) 0.625 ns (tCK) —
CAS Latency CL22 (DDR4-3200) —
Access Time 19 ns —
Supply Voltage VDD 1.2 V —
I/O Interface POD12 (1.2 V pseudo-open drain) —
VPP Voltage 2.5 V —
Number of Banks 16 (4 bank groups x 4 banks) —
Operating Temperature (AUT grade) -40C to +95C (per Micron grade table) —
Package 78-FBGA (7.5 x 11 mm) FBGA-78
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (lead-free FBGA package)
Die Revision AG (current generation) —
Manufacturer — SK Hynix
Data Rate — DDR4-2400 (2400 MT/s)
Supply Voltage — 1.2 V
Interface — Parallel, DDR4
Bank Group Architecture — DDR4 bank-group architecture
On-Die Termination (ODT) — Yes
Operating Temperature — [DATA_NEEDED: operating temperature range]
Refresh — Self-refresh and auto-refresh (DDR4)
MSL Level — [DATA_NEEDED: moisture sensitivity level]
Applications — Data storage, firmware boot, industrial controllers, computing modules

Datasheets & Resources

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