MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron
MPN: MT40A2G8AG-062E β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $14.5 | $14.50 |
| 10 | $13.2 | $132.00 |
| 100 | $11.9 | $1,190.00 |
| 500 | $10.8 | $5,400.00 |
| 1,000 | $9.75 | $9,750.00 |
Drop-in alternatives for MT40A2G8AG-062E β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT40A2G8AG-062E AAT:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A2G8AG-062E AIT:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A2G8SA-062E:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A2G8AG-062E:F
β Drop-Inπ Reference alternative (not in catalog)
K4AAG085WM-BCWE
β Drop-Inβ In Stock
$7 / Unit
View Datasheet βMT40A2G8AG-062E Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 16 Gbit |
| Organization | 2G x 8 |
| Speed | DDR4-3200 (3200 MT/s) |
| Clock Frequency | 1600 MHz |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) |
| CAS Latency | CL22 (DDR4-3200) |
| Access Time | 19 ns |
| Supply Voltage VDD | 1.2 V |
| I/O Interface | POD12 (1.2 V pseudo-open drain) |
| VPP Voltage | 2.5 V |
| Number of Banks | 16 (4 bank groups x 4 banks) |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) |
| Package | 78-FBGA (7.5 x 11 mm) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Die Revision | AG (current generation) |
MT40A2G8AG-062E 78-fbga (7.5 x 11 mm) Pin Configuration Guide
Complete pinout information for MT40A2G8AG-062E (78-fbga (7.5 x 11 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT40A2G8AG-062E.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT40A2G8AG-062E is suitable for 6 applications: Embedded Systems Main Memory, Networking and Telecom Equipment, Server Memory Modules (RDIMM/LRDIMM), Industrial Controllers and Automation, Automotive Infotainment and ADAS, Test and Measurement Instrumentation.
Embedded Systems Main Memory
The MT40A2G8AG-062E provides 16Gb of DDR4 main memory in a memory-down configuration for embedded processors such as ARM-based SoCs and industrial compute modules. Its 2G x 8 organization lets designers place two ICs for a 64-bit bus with ECC, or four for a 32-bit bus, at the DDR4-3200 data rate with tCK = 0.625 ns. The compact 78-FBGA (7.5 x 11 mm) footprint fits dense layouts where SODIMM sockets are impractical. Because the POD12 interface operates at 1.2V, dynamic memory power is minimized for fanless enclosures. Place devices close to the host controller with length-matched fly-by routing and ODT calibration via the ZQ resistor for reliable signal integrity.
Recommended
Networking and Telecom Equipment
Routers, switches, and telecom line cards require high-bandwidth packet buffering and deep flow tables, which the MT40A2G8AG-062E supplies with its DDR4-3200 data rate and 4-bank-group architecture delivering high sustained bandwidth. The 16Gb density in x8 organization allows scalable buffering pools, and the AIT industrial grade extends operating temperature for outdoor and central-office equipment. POD12 I/O with on-die termination (ODT) reduces the external termination network, cutting BOM cost on high-density boards. Designers typically pair this DRAM with network processors or FPGA-based forwarding engines; ensure CA parity is enabled for link integrity in long-uptime deployments.
Recommended
Server Memory Modules (RDIMM/LRDIMM)
The MT40A2G8AG-062E is a standard building block for server RDIMMs and memory-down server boards, where x8 organization is mandatory for ECC (one bit per IC, SECDED corrected by the controller). Eighteen ICs populate a 32GB dual-rank RDIMM at DDR4-3200 with CL22 timing. Bank Group Architecture sustains bandwidth across ranks, write CRC protects data on long stubs, and CA parity guards command integrity on registered modules. The AG die revision meets current server qualification requirements, replacing the retired SA die. Thermal design matters at 16 ICs per module: spread devices along the PCB and couple the FBGA lid to a heat spreader for airflow-based cooling.
Recommended
Industrial Controllers and Automation
Industrial PCs, motion controllers, and vision systems use the MT40A2G8AG-062E AIT grade for vibration-tolerant, wide-temperature main memory in memory-down layouts. The 78-FBGA package survives thermal cycling better than socketed DIMMs, and the -062E speed grade (DDR4-3200) provides headroom for real-time image buffering and protocol stacks. POD12 operation reduces wasted termination power inside sealed enclosures with passive cooling. Designers should qualify the board across the full industrial temperature range, account for DRAM refresh scheduling in deterministic-control software, and use the ZQ calibration resistor close to the device. The AG die improves refresh parameters over the earlier SA-die generation.
Recommended
Automotive Infotainment and ADAS
The AUT:F automotive grade of the MT40A2G8AG die serves infotainment head units, digital clusters, and ADAS sensor-fusion platforms requiring multi-gigabyte frame buffers and map data. Automotive memory controllers run DDR4-3200 in point-to-point or two-load topologies; the 2G x 8 organization scales from 2GB (one IC, 32-bit bus, x16 controller modes) to larger pools. The 1.2V POD12 interface minimizes heat in dash-constrained enclosures, while the AUT grade is validated to automotive qualification requirements. Layout must follow fly-by termination rules and account for cabin-temperature derating; DRAM self-refresh retention during ignition-off states should be verified with the SoC vendor's power-management design guide.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators need deep acquisition memory to capture long record lengths, and the MT40A2G8AG-062E delivers 16Gb per device at DDR4-3200. Instruments often place 4-8 DRAMs in parallel to build tens of gigabytes of capture buffer, using the x8 organization with controller-side ECC to guarantee sample integrity during long captures. The compact 78-FBGA permits high channel-count layouts near acquisition ASICs or FPGAs. Bandwidth-hungry streaming architectures benefit from interleaving across bank groups; designers should simulate multi-load DDR4 topology and confirm tDQSCK skew across devices when interleaving capture streams at full data rate.
Recommended
Recommended Products Summary
Engineering reference data for MT40A2G8AG-062E β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT40A2G8AG-062E AAT:F | MT40A2G8SA-062E:F | MT40A2G8AG-062E:F | K4AAG085WM-BCWE |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Samsung Electronics |
| Package | 78-FBGA (7.5 x 11 mm) | 78-FBGA (7.5 x 11 mm) - same | 78-FBGA (7.5 x 11 mm) - same | 78-FBGA (7.5 x 11 mm) - same | 78-FBGA - verify ballout |
| Density / Organization | 16Gb, 2G x 8 | 16Gb, 2G x 8 | 16Gb, 2G x 8 | 16Gb, 2G x 8 | 16Gb, 2G x 8 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s (1600 MHz) | 3200 MT/s |
| Supply Voltage | 1.2 V (POD12) | 1.2 V (POD12) | 1.2 V (POD12) | 1.2 V | 1.2 V |
| Die Revision | AG (current generation) | AG - same | SA (older, EOL) | AG equivalent | [DATA_NEEDED] |
| Lifecycle Status | Active | Active | Obsolete / EOL | Active | Active |
| Price (qty 1) | $14.50 (as of 2026-09-04) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Current-generation AG die with active lifecycle (vs MT40A2G8SA-062E:F)
- Guaranteed second source with identical die (vs MT40A2G8AG-062E:F (Alliance Memory))
- x8 organization enables DBI and ECC (vs MT40A512M16GE-083E (x16))
Design Notes
DDR4-3200 routing at tCK = 0.625 ns requires controlled-impedance fly-by topology for address/command (with 40-ohm on-die termination setting via MRS) and length-matched point-to-point data groups. Keep DQ/DQS/DM traces length-matched within +/-25 mils per inch of propagation and route over a solid reference plane. Follow Micron's DDR4 layout and SI application guidelines for multi-rank topologies, including write-leveling calibration on x8 devices. Simulate the full topology in SI tools before tape-out - at 3200 MT/s, stub lengths over 100 mils on data lines can close the eye.
Provide three supply rails: VDD/VDDQ at 1.2V (POD12), VPP at 2.5V, and VREFCA derived from a precision divider or regulator per the DDR4 specification. Estimated: a single 16Gb x8 device at DDR4-3200 draws roughly 400-700 mA peak on VDDQ depending on utilization - size the 1.2V rail per IC count and add bulk capacitance (e.g., 22uF ceramic per device plus 100uF bulk per bus) with local 0.1uF decoupling at each ball pair for VDD and VDDQ.
The 78-FBGA (7.5 x 11 mm, 0.8 mm ball pitch) requires a fanout-friendly pad design; use via-in-pad or dog-bone fanout on 0.8 mm pitch without violating IPC-based drill/wire rules of your fabricator. Place the ZQ calibration resistor (240 ohm 1%) within 10 mm of the ZQ ball with a short, low-inductance return. For thermal management in multi-IC memory-down stacks, add thermal vias under the package center to internal copper planes and consider lid-to-chassis coupling on server boards.
Common mistakes when converting from the obsolete MT40A2G8SA-062E to this AG part: forgetting to update controller timing tables (AG die refresh and tFAW parameters differ slightly), and using commercial-grade software timing in automotive AUT platforms. Also verify VPP (2.5V) is actually populated on legacy DDR3-based boards - DDR3 boards lack VPP and will not operate DDR4. Always re-run controller memory-training after any die-conversion to validate read/write margins.
Compliance Information
RoHS compliance per distributor listings. AUT grade is qualified to Micron's automotive product-grade requirements (AEC-Q100-equivalent Q-100 grade depends on suffix - verify with Micron for your exact suffix).
