MT40A2G8AG-062E vs H5ANAG8NAMR-UHC 对比

详细并排对比 MT40A2G8AG-062E 出自 Micron Technology 和 H5ANAG8NAMR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A2G8AG-062E MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E - 16Gb DDR4 SDRAM 2Gx8 3200Mbps | Micron

MT40A2G8AG-062E ✓ 量产中
SK hynix
H5ANAG8NAMR-UHC H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC - 16Gb DDR4-2400 SDRAM 2Gx8 | SK Hynix

H5ANAG8NAMR-UHC ✓ 量产中

规格对比

参数 MT40A2G8AG-062E H5ANAG8NAMR-UHC
品牌 Micron Technology SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.75 $2.15
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit 16 Gbit
存储组织 2G x 8 2G x 8
Speed DDR4-3200 (3200 MT/s) —
Clock Frequency 1600 MHz —
Access Time (Clock Cycle Time) 0.625 ns (tCK) —
CAS 延迟 CL22 (DDR4-3200) —
Access Time 19 ns —
Supply Voltage VDD 1.2 V —
I/O Interface POD12 (1.2 V pseudo-open drain) —
VPP Voltage 2.5 V —
Number of Banks 16 (4 bank groups x 4 banks) —
Operating Temperature (AUT grade) -40C to +95C (per Micron grade table) —
封装 78-FBGA (7.5 x 11 mm) FBGA-78
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant (lead-free FBGA package)
Die Revision AG (current generation) —
Manufacturer — SK Hynix
数据速率 — DDR4-2400 (2400 MT/s)
电源电压 — 1.2 V
接口 — Parallel, DDR4
Bank Group Architecture — DDR4 bank-group architecture
On-Die Termination (ODT) — Yes
工作温度 — [DATA_NEEDED: operating temperature range]
Refresh — Self-refresh and auto-refresh (DDR4)
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]
Applications — Data storage, firmware boot, industrial controllers, computing modules

数据手册与资源

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