MT40A512M16TB-062E:R vs MT40A512M16LY-075 Comparison

Detailed side-by-side comparison of MT40A512M16TB-062E:R by Micron Technology and MT40A512M16LY-075 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A512M16TB-062E:R MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A512M16TB-062E:R ✓ Active
Micron Technology
MT40A512M16LY-075 MT40A512M16LY-075 - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16LY-075 - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16LY-075 ✓ Active

Specification Comparison

Parameter MT40A512M16TB-062E:R MT40A512M16LY-075
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $60.00 $27.89
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit (512M x 16) —
Data Rate 3200 MT/s DDR4-2666
Clock Frequency 1600 MHz —
CAS Latency 22 —
Supply Voltage (VDD/VDDQ) 1.2V ±60mV 1.2V ±60mV
VPP Voltage 2.5V (-125mV, +250mV) —
Operating Temperature 0°C to +95°C —
Package 96-FBGA (7.5x13 mm) 96-FBGA (7.5x13.5 mm)
Interface Parallel —
Data Bus Width 16 bits —
Refresh Time 8192 cycles (64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C) —
I/O Type 1.2V pseudo open-drain 1.2V pseudo open-drain
Features Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration —
RoHS Status Compliant —
Density — 8 Gbit
Organization — 512M x 16
Clock Speed — 1.33 GHz
VPP Supply — 2.5V (-125mV, +250mV)
Internal Banks (x16) — 8 (2 groups of 4 banks)
Refresh Time at TC -40°C to 85°C — 64ms
Refresh Time at TC >85°C to 95°C — 32ms
Refresh Time at TC >95°C to 105°C — 16ms
Operating Temperature Range — 0°C to +95°C
Mounting Type — Surface Mount

Datasheets & Resources

Browse All Products Create BOM Request Quote