MT41K256M16RE-125:D vs K4B4G1646E-BYMATCV Comparison
Detailed side-by-side comparison of MT41K256M16RE-125:D by Micron Technology and K4B4G1646E-BYMATCV by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ ActiveSamsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16RE-125:D | K4B4G1646E-BYMATCV |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.19 | $5.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organization | 256M x 16 | — |
| Supply Voltage | 1.35 V | 1.35 V |
| Data Rate | 1600 MT/s | 1866 Mbps |
| CAS Latency | 11 | Programmable (e.g., 13, 12, 11) |
| Package | FBGA-96 (9x14 mm) | 96-ball FBGA |
| Operating Temperature | 0C to +95C (TC) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Burst Length | 8, 4 | 8 (with burst chop 4) |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | Yes |
| Ball Pitch | 0.8 mm | — |
| Memory Size | — | 4 Gbit (256M x 16) |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Number of Pins | — | 96 |
| Operating Temperature Range | — | -40°C to +95°C |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Yes |
| Auto Precharge | — | Yes |
| RoHS Status | — | Compliant |