MT41K256M16TW-107 vs K4A8G165WB-BCPB Comparison
Detailed side-by-side comparison of MT41K256M16TW-107 by Micron Technology and K4A8G165WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB ✓ ActiveSpecification Comparison
| Parameter | MT41K256M16TW-107 | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.10 | $2.30 |
| Memory Type | DDR3L SDRAM | — |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 512M x 16 |
| Interface | Parallel | — |
| Clock Frequency | 933 MHz (DDR3L-1866) | — |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35 V | 1.2 V (1.14 V to 1.26 V) |
| Data Bus Width | 16 bit | — |
| Package | 96-FBGA (8x14 mm) | 96-ball FBGA (TFBGA-96) |
| Mounting Type | Surface Mount | — |
| Operating Temperature | 0C to +95C (commercial :P grade) | 0°C to 85°C |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| Density | — | 8 Gb |
| Speed Grade | — | 2133 Mbps (PC4-17000) |
| Burst Length | — | 8 (BL8) |
| Burst Type | — | Sequential and Interleave |
| CAS Latency | — | Programmable (e.g., 15, 16, 18) |
| Refresh | — | Auto and Self Refresh |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Package Shape | — | RECTANGULAR |
| Terminal Position | — | BOTTOM |