MT41K256M16TW-107 vs K4B4G1646D-BCK0 Comparison
Detailed side-by-side comparison of MT41K256M16TW-107 by Micron Technology and K4B4G1646D-BCK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | MT41K256M16TW-107 | K4B4G1646D-BCK0 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.10 | $2.30 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Interface | Parallel | — |
| Clock Frequency | 933 MHz (DDR3L-1866) | 800 MHz |
| Access Time | 20 ns | — |
| Supply Voltage | 1.35 V | — |
| Data Bus Width | 16 bit | — |
| Package | 96-FBGA (8x14 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Mounting Type | Surface Mount | — |
| Operating Temperature | 0C to +95C (commercial :P grade) | 0°C to 95°C (Tc) |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| Density | — | 4 Gb |
| Number of Banks | — | 8 |
| Data Rate | — | 1600 Mbps per pin |
| Supply Voltage (VDD) | — | 1.35V (1.283V to 1.45V) |
| Supply Voltage (VDDQ) | — | 1.35V (1.283V to 1.45V) |
| CAS Latency | — | 11 (programmable) |
| Burst Length | — | 8, 4 |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |