MT41K256M16TW-107 vs K4B4G1646D-BCK0 对比
详细并排对比 MT41K256M16TW-107 出自 Micron Technology 和 K4B4G1646D-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MT41K256M16TW-107 | K4B4G1646D-BCK0 |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $14.10 | $2.30 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储容量 | 4 Gbit | — |
| 存储组织 | 256M x 16 | 256M x 16 |
| 接口 | Parallel | — |
| Clock Frequency | 933 MHz (DDR3L-1866) | 800 MHz |
| Access Time | 20 ns | — |
| 电源电压 | 1.35 V | — |
| 数据总线宽度 | 16 bit | — |
| 封装 | 96-FBGA (8x14 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| 安装类型 | Surface Mount | — |
| 工作温度 | 0C to +95C (commercial :P grade) | 0°C to 95°C (Tc) |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| Density | — | 4 Gb |
| Number of Banks | — | 8 |
| 数据速率 | — | 1600 Mbps per pin |
| Supply Voltage (VDD) | — | 1.35V (1.283V to 1.45V) |
| Supply Voltage (VDDQ) | — | 1.35V (1.283V to 1.45V) |
| CAS 延迟 | — | 11 (programmable) |
| Burst Length | — | 8, 4 |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |