MW7IC2040GNR1 vs MW7IC2040NR1 Comparison
Detailed side-by-side comparison of MW7IC2040GNR1 by NXP Semiconductors and MW7IC2040NR1 by NXP Semiconductors. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
NXP Semiconductors
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
MW7IC2040NR1 ✓ ActiveSpecification Comparison
| Parameter | MW7IC2040GNR1 | MW7IC2040NR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Category | RF Amplifiers | RF Amplifiers |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $17.50 | $24.20 |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Part Family | MW7IC2040 (NR1 / GNR1 / NBR1) | — |
| Device Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Output Power (CW) | 4 W typical | — |
| Power Supply Voltage | 24 V to 32 V (28 V nominal) | — |
| Quiescent Current | 75 mA (typical, per web data) | — |
| Small-Signal Gain | 23.5 dB (typical at 1.99 GHz, per web data) | 23.5 dB |
| RF Type | General Purpose / Cellular Base Station PA | General Purpose / Wideband Integrated Power Amplifier |
| Modulation Support | W-CDMA, GSM/EDGE, multi-carrier cellular | — |
| On-Chip Matching | Yes (input/output 50 ohm) | — |
| Number of Stages | 2 (multi-stage integrated) | — |
| Technology | LDMOS (Laterally Diffused MOS) | RF LDMOS (Laterally Diffused MOSFET) |
| Package / Case | TO-270-16 Variant, Gull Wing (TO-270 WBL-16) | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Package Body Material | Plastic / Epoxy overmold | — |
| Mounting Type | Surface Mount (Gull Wing leads) | Surface Mount (PCB solderable with bottom drain ground plane) |
| Packaging | Tape & Reel | — |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | — |
| ESD Protection | Yes (integrated) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant (per NXP product family) |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Halogen Free | Not Compliant (per GlobalSpec listing) | — |
| Function | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Pin Count | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Operating Temperature | — | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |