MW7IC2040GNR1 vs MW7IC2040NR1 Comparaison
Comparaison détaillée côte à côte de MW7IC2040GNR1 par NXP Semiconductors et MW7IC2040NR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MW7IC2040GNR1 | MW7IC2040NR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | RF Amplifiers | RF Amplifiers |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $17,50 | $24,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Part Family | MW7IC2040 (NR1 / GNR1 / NBR1) | — |
| Device Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Output Power (CW) | 4 W typical | — |
| Power Supply Voltage | 24 V to 32 V (28 V nominal) | — |
| Courant de repos | 75 mA (typical, per web data) | — |
| Small-Signal Gain | 23.5 dB (typical at 1.99 GHz, per web data) | 23.5 dB |
| RF Type | General Purpose / Cellular Base Station PA | General Purpose / Wideband Integrated Power Amplifier |
| Modulation Support | W-CDMA, GSM/EDGE, multi-carrier cellular | — |
| On-Chip Matching | Yes (input/output 50 ohm) | — |
| Number of Stages | 2 (multi-stage integrated) | — |
| Technology | LDMOS (Laterally Diffused MOS) | RF LDMOS (Laterally Diffused MOSFET) |
| Boîtier / Format | TO-270-16 Variant, Gull Wing (TO-270 WBL-16) | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Package Body Material | Plastic / Epoxy overmold | — |
| Type de montage | Surface Mount (Gull Wing leads) | Surface Mount (PCB solderable with bottom drain ground plane) |
| Packaging | Tape & Reel | — |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| ESD Protection | Yes (integrated) | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Compliant (per NXP product family) |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Sans halogène | Not Compliant (per GlobalSpec listing) | — |
| Fonction | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Nombre de broches | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Température de fonctionnement | — | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |