MW7IC2040GNR1 vs MW7IC2040NR1 비교

다음의 상세 나란히 비교: MW7IC2040GNR1 제조: NXP Semiconductors 및 MW7IC2040NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MW7IC2040GNR1 MW7IC2040GNR1 - 4W RF LDMOS PA, 1.8-1.99 GHz | NXP

MW7IC2040GNR1 - 4W RF LDMOS PA, 1.8-1.99 GHz | NXP

MW7IC2040GNR1 Obsolete
NXP Semiconductors
MW7IC2040NR1 MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 ✓ 활성

사양 비교

파라미터 MW7IC2040GNR1 MW7IC2040NR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Amplifiers RF Amplifiers
수명 주기 상태 Obsolete 활성
재고 상태 In Stock In Stock
단가 (USD) $17.50 $24.20
Manufacturer NXP Semiconductors (formerly Freescale/Motorola) NXP Semiconductors (formerly Freescale / Motorola Semiconductor)
Part Family MW7IC2040 (NR1 / GNR1 / NBR1) —
Device Type RF LDMOS Wideband Integrated Power Amplifier —
Frequency Range 1805 MHz to 1990 MHz —
Output Power (CW) 4 W typical —
Power Supply Voltage 24 V to 32 V (28 V nominal) —
대기 전류 75 mA (typical, per web data) —
Small-Signal Gain 23.5 dB (typical at 1.99 GHz, per web data) 23.5 dB
RF Type General Purpose / Cellular Base Station PA General Purpose / Wideband Integrated Power Amplifier
Modulation Support W-CDMA, GSM/EDGE, multi-carrier cellular —
On-Chip Matching Yes (input/output 50 ohm) —
Number of Stages 2 (multi-stage integrated) —
Technology LDMOS (Laterally Diffused MOS) RF LDMOS (Laterally Diffused MOSFET)
패키지 / 케이스 TO-270-16 Variant, Gull Wing (TO-270 WBL-16) TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount
Package Body Material Plastic / Epoxy overmold —
실장 유형 Surface Mount (Gull Wing leads) Surface Mount (PCB solderable with bottom drain ground plane)
Packaging Tape & Reel —
동작 온도 범위 [DATA_NEEDED: operating temperature range] —
ESD Protection Yes (integrated) —
RoHS 상태 [DATA_NEEDED: RoHS status] Compliant (per NXP product family)
Lead-Free [DATA_NEEDED: lead-free status] —
할로겐 프리 Not Compliant (per GlobalSpec listing) —
기능 — Two-stage integrated power amplifier with on-chip matching
Frequency Range (Application) — 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS)
Frequency Range (Characterization) — 100 MHz to 1 GHz
Supply Voltage (Vdd) — 24 V to 32 V (nominal 28 V)
Maximum Supply Voltage — 32 V
Quiescent Supply Current (Idq) — 75 mA
Output Power (avg, W-CDMA) — 4 W (typical at rated operating conditions)
Modulation Compatibility — Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats
핀 수 — 16
Operating Mode — Class-AB (multi-stage, externally biased)
Lead Configuration — Flat leads (surface-mount)
동작 온도 — -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family)
Packaging Type — Tape & Reel (per part suffix NR1 suffix convention)

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