MW7IC2040GNR1 vs MW7IC2040NR1 Comparación

Comparación detallada lado a lado de MW7IC2040GNR1 por NXP Semiconductors y MW7IC2040NR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MW7IC2040GNR1 MW7IC2040GNR1 - 4W RF LDMOS PA, 1.8-1.99 GHz | NXP

MW7IC2040GNR1 - 4W RF LDMOS PA, 1.8-1.99 GHz | NXP

MW7IC2040GNR1 Obsolete
NXP Semiconductors
MW7IC2040NR1 MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS

MW7IC2040NR1 ✓ Activo

Comparación de especificaciones

Parámetro MW7IC2040GNR1 MW7IC2040NR1
Marca NXP Semiconductors NXP Semiconductors
Categoría RF Amplifiers RF Amplifiers
Estado del ciclo de vida Obsolete Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $17,50 $24,20
Manufacturer NXP Semiconductors (formerly Freescale/Motorola) NXP Semiconductors (formerly Freescale / Motorola Semiconductor)
Part Family MW7IC2040 (NR1 / GNR1 / NBR1) —
Device Type RF LDMOS Wideband Integrated Power Amplifier —
Frequency Range 1805 MHz to 1990 MHz —
Output Power (CW) 4 W typical —
Power Supply Voltage 24 V to 32 V (28 V nominal) —
Corriente en reposo 75 mA (typical, per web data) —
Small-Signal Gain 23.5 dB (typical at 1.99 GHz, per web data) 23.5 dB
RF Type General Purpose / Cellular Base Station PA General Purpose / Wideband Integrated Power Amplifier
Modulation Support W-CDMA, GSM/EDGE, multi-carrier cellular —
On-Chip Matching Yes (input/output 50 ohm) —
Number of Stages 2 (multi-stage integrated) —
Technology LDMOS (Laterally Diffused MOS) RF LDMOS (Laterally Diffused MOSFET)
Encapsulado / Carcasa TO-270-16 Variant, Gull Wing (TO-270 WBL-16) TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount
Package Body Material Plastic / Epoxy overmold —
Tipo de montaje Surface Mount (Gull Wing leads) Surface Mount (PCB solderable with bottom drain ground plane)
Packaging Tape & Reel —
Rango de temperatura de funcionamiento [DATA_NEEDED: operating temperature range] —
ESD Protection Yes (integrated) —
Estado RoHS [DATA_NEEDED: RoHS status] Compliant (per NXP product family)
Lead-Free [DATA_NEEDED: lead-free status] —
Sin halógenos Not Compliant (per GlobalSpec listing) —
Función — Two-stage integrated power amplifier with on-chip matching
Frequency Range (Application) — 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS)
Frequency Range (Characterization) — 100 MHz to 1 GHz
Supply Voltage (Vdd) — 24 V to 32 V (nominal 28 V)
Maximum Supply Voltage — 32 V
Quiescent Supply Current (Idq) — 75 mA
Output Power (avg, W-CDMA) — 4 W (typical at rated operating conditions)
Modulation Compatibility — Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats
Recuento de pines — 16
Operating Mode — Class-AB (multi-stage, externally biased)
Lead Configuration — Flat leads (surface-mount)
Temperatura de funcionamiento — -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family)
Packaging Type — Tape & Reel (per part suffix NR1 suffix convention)

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