MW7IC2040GNR1 vs MW7IC2040NR1 Comparação
Comparação detalhada lado a lado de MW7IC2040GNR1 por NXP Semiconductors e MW7IC2040NR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | MW7IC2040GNR1 | MW7IC2040NR1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | RF Amplifiers | RF Amplifiers |
| Status do ciclo de vida | Obsolete | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $17,50 | $24,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale/Motorola) | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Part Family | MW7IC2040 (NR1 / GNR1 / NBR1) | — |
| Device Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1805 MHz to 1990 MHz | — |
| Output Power (CW) | 4 W typical | — |
| Power Supply Voltage | 24 V to 32 V (28 V nominal) | — |
| Corrente de repouso | 75 mA (typical, per web data) | — |
| Small-Signal Gain | 23.5 dB (typical at 1.99 GHz, per web data) | 23.5 dB |
| RF Type | General Purpose / Cellular Base Station PA | General Purpose / Wideband Integrated Power Amplifier |
| Modulation Support | W-CDMA, GSM/EDGE, multi-carrier cellular | — |
| On-Chip Matching | Yes (input/output 50 ohm) | — |
| Number of Stages | 2 (multi-stage integrated) | — |
| Technology | LDMOS (Laterally Diffused MOS) | RF LDMOS (Laterally Diffused MOSFET) |
| Encapsulamento / Caixa | TO-270-16 Variant, Gull Wing (TO-270 WBL-16) | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Package Body Material | Plastic / Epoxy overmold | — |
| Tipo de montagem | Surface Mount (Gull Wing leads) | Surface Mount (PCB solderable with bottom drain ground plane) |
| Packaging | Tape & Reel | — |
| Faixa de temperatura de operação | [DATA_NEEDED: operating temperature range] | — |
| ESD Protection | Yes (integrated) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (per NXP product family) |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Livre de halogênio | Not Compliant (per GlobalSpec listing) | — |
| Função | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Contagem de pinos | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Temperatura de operação | — | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |