NT5AD512M16A4-GZ vs MT40A512M16JY-075E Comparison

Detailed side-by-side comparison of NT5AD512M16A4-GZ by Nanya Technology and MT40A512M16JY-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5AD512M16A4-GZ

NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya

NT5AD512M16A4-GZ βœ“ Active
Micron Technology
MT40A512M16JY-075E

MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-075E βœ“ Active

Specification Comparison

Parameter NT5AD512M16A4-GZ MT40A512M16JY-075E
Brand Nanya Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.50 $30.50
Memory Type DDR4 SDRAM DDR4 SDRAM
Organization 512M x 16 512M x 16
Density 8Gb β€”
Supply Voltage 1.2V β€”
Maximum Clock Frequency 1200 MHz β€”
Data Bus Width 16 bits β€”
Package TFBGA-96 96-FBGA (8x14)
Number of Terminals 96 β€”
Interleaved Burst Length 4, 8 β€”
Access Mode Four Bank Page Burst β€”
Operating Temperature Range Commercial and Industrial 0Β°C to +95Β°C (TC)
RoHS Compliant β€”
Lead-Free Yes β€”
Auto Self-Refresh Yes β€”
Built-in Temperature Sensor Yes β€”
CRC Function Yes β€”
Data Mask Function Yes β€”
Write Leveling Function Yes β€”
ZQ Calibration Function Yes β€”
Memory Size β€” 8 Gbit
Clock Frequency β€” 1.33 GHz
Data Rate β€” 2666 MT/s
Supply Voltage (VDD/VDDQ) β€” 1.14V to 1.26V
VPP Voltage β€” 2.5V (-125mV, +250mV)
Interface β€” Parallel
Mounting Type β€” Surface Mount
Refresh Time β€” 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C
RoHS Status β€” Compliant
Features β€” Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC
I/O Type β€” 1.2V pseudo open-drain

Datasheets & Resources

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