NT5AD512M16A4-GZ vs MT40A512M16JY-075E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5AD512M16A4-GZ sa pamamagitan ng Nanya Technology at MT40A512M16JY-075E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-075E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5AD512M16A4-GZ | MT40A512M16JY-075E |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Organisasyon | 512M x 16 | 512M x 16 |
| Density | 8Gb | — |
| Volte ng Pagbibigay | 1.2V | — |
| Maksimum na Taktiko ng Oras | 1200 MHz | — |
| Width ng Data Bus | 16 bits | — |
| Packhaging | TFBGA-96 | 96-FBGA (8x14) |
| Number of Terminals | 96 | — |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | — |
| Hanay ng Temperature na Operasyon | Commercial and Industrial | 0°C to +95°C (TC) |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| CRC Function | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| Laki ng Memory | — | 8 Gbit |
| Clock Frequency | — | 1.33 GHz |
| Rate ng Data | — | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Interface | — | Parallel |
| Uri ng Pagpapasok | — | Surface Mount |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Tindminan RoHS | — | Compliant |
| Mga Karakteristika | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |