NT5AD512M16A4-GZ vs NT5AD512M16 Comparison
Detailed side-by-side comparison of NT5AD512M16A4-GZ by Nanya Technology and NT5AD512M16 by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5AD512M16A4-GZ | NT5AD512M16 |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8Gb | — |
| Supply Voltage | 1.2V | — |
| Maximum Clock Frequency | 1200 MHz | — |
| Data Bus Width | 16 bits | — |
| Package | TFBGA-96 | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | — |
| Operating Temperature Range | Commercial and Industrial | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | Yes |
| Built-in Temperature Sensor | Yes | Yes |
| CRC Function | Yes | Yes |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| Total Density | — | 8 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Data Rate | — | 3200 Mbps (DDR4-3200) |
| Operating Temperature (Commercial) | — | 0°C to +95°C |
| Operating Temperature (Industrial) | — | -40°C to +95°C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |