NT5AD512M16A4-GZ vs NT5AD512M16 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5AD512M16A4-GZ sa pamamagitan ng Nanya Technology at NT5AD512M16 sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | NT5AD512M16A4-GZ | NT5AD512M16 |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Organisasyon | 512M x 16 | 512M x 16 |
| Density | 8Gb | — |
| Volte ng Pagbibigay | 1.2V | — |
| Maksimum na Taktiko ng Oras | 1200 MHz | — |
| Width ng Data Bus | 16 bits | — |
| Packhaging | TFBGA-96 | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | — |
| Hanay ng Temperature na Operasyon | Commercial and Industrial | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | Yes |
| Built-in Temperature Sensor | Yes | Yes |
| CRC Function | Yes | Yes |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| Total Density | — | 8 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Rate ng Data | — | 3200 Mbps (DDR4-3200) |
| Operating Temperature (Commercial) | — | 0°C to +95°C |
| Operating Temperature (Industrial) | — | -40°C to +95°C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |