NT5AD512M16A4-GZ vs NT5AD512M16 比較
詳細並排比較 NT5AD512M16A4-GZ 由 Nanya Technology 與 NT5AD512M16 由 Nanya Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NT5AD512M16A4-GZ | NT5AD512M16 |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 組織 | 512M x 16 | 512M x 16 |
| Density | 8Gb | — |
| 供應電壓 | 1.2V | — |
| 最大時脈頻率 | 1200 MHz | — |
| 資料匯流排寬度 | 16 bits | — |
| 封裝 | TFBGA-96 | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | — |
| 工作溫度範圍 | Commercial and Industrial | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | Yes |
| Built-in Temperature Sensor | Yes | Yes |
| CRC Function | Yes | Yes |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| Total Density | — | 8 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| 資料速率 | — | 3200 Mbps (DDR4-3200) |
| Operating Temperature (Commercial) | — | 0°C to +95°C |
| Operating Temperature (Industrial) | — | -40°C to +95°C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |