NT5AD512M16A4-GZ vs NT5AD512M16C4-JRI Comparison
Detailed side-by-side comparison of NT5AD512M16A4-GZ by Nanya Technology and NT5AD512M16C4-JRI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16A4-GZ
NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya
NT5AD512M16A4-GZ β ActiveNanya Technology
NT5AD512M16C4-JRI
NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology
NT5AD512M16C4-JRI β ActiveSpecification Comparison
| Parameter | NT5AD512M16A4-GZ | NT5AD512M16C4-JRI |
|---|---|---|
| Brand | Nanya Technology | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.50 | $75.58 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8Gb | β |
| Supply Voltage | 1.2V | 1.2 V |
| Maximum Clock Frequency | 1200 MHz | β |
| Data Bus Width | 16 bits | β |
| Package | TFBGA-96 | TFBGA-96 |
| Number of Terminals | 96 | β |
| Interleaved Burst Length | 4, 8 | β |
| Access Mode | Four Bank Page Burst | β |
| Operating Temperature Range | Commercial and Industrial | -40Β°C to +95Β°C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | β |
| Auto Self-Refresh | Yes | Yes |
| Built-in Temperature Sensor | Yes | Yes |
| CRC Function | Yes | Yes |
| Data Mask Function | Yes | β |
| Write Leveling Function | Yes | β |
| ZQ Calibration Function | Yes | β |
| Memory Density | β | 8 Gbit |
| Data Rate | β | 3200 Mbps (DDR4-3200) |
| Mounting Type | β | Surface Mount |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |
| Write Leveling | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |