NT5AD512M16B4-HR vs MT40A512M16TB-062E:J Comparison

Detailed side-by-side comparison of NT5AD512M16B4-HR by Nanya Technology and MT40A512M16TB-062E:J by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5AD512M16B4-HR NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya

NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya

NT5AD512M16B4-HR ✓ Active
Micron Technology
MT40A512M16TB-062E:J MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J - 8Gb DDR4 SDRAM 1.6GHz | Micron

MT40A512M16TB-062E:J ✓ Active

Specification Comparison

Parameter NT5AD512M16B4-HR MT40A512M16TB-062E:J
Brand Nanya Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $43.10 $8.10
Memory Type DDR4 SDRAM SDRAM - DDR4
Density 8Gb —
Organization 512M x 16 —
Supply Voltage 1.2V —
Package 96-ball TFBGA 96-FBGA (7.5x13.5 mm)
Temperature Range 0°C to +95°C —
Data Rate 3200 Mbps —
Auto Self-Refresh Yes —
Built-in Temperature Sensor Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes —
Write Leveling Yes —
Dynamic On-Chip Termination Yes —
ZQ Calibration Yes —
CRC Function Yes —
RoHS Compliant —
Memory Size — 8Gbit (512M x 16)
Clock Frequency — 1.6 GHz
Access Time — 19 ns
Supply Voltage (VDD/VDDQ) — 1.2V ±60mV
VPP Supply Voltage — 2.5V (-125mV, +250mV)
I/O Type — 1.2V pseudo open-drain
Refresh Time — 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C
Internal Banks (x16) — 8 (2 groups of 4 banks each)
Prefetch Architecture — 8n-bit
Operating Temperature Range — 0°C to 95°C
RoHS Status — Compliant
Lead-Free — Yes
Mounting Type — Surface Mount

Datasheets & Resources

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