NT5AD512M16B4-HR vs MT40A512M16TB-062E:J 对比
详细并排对比 NT5AD512M16B4-HR 出自 Nanya Technology 和 MT40A512M16TB-062E:J 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | NT5AD512M16B4-HR | MT40A512M16TB-062E:J |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $43.10 | $8.10 |
| 存储器类型 | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8Gb | — |
| 存储组织 | 512M x 16 | — |
| 电源电压 | 1.2V | — |
| 封装 | 96-ball TFBGA | 96-FBGA (7.5x13.5 mm) |
| Temperature Range | 0°C to +95°C | — |
| 数据速率 | 3200 Mbps | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| 存储容量 | — | 8Gbit (512M x 16) |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 19 ns |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| I/O Type | — | 1.2V pseudo open-drain |
| Refresh Time | — | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| Internal Banks (x16) | — | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | — | 8n-bit |
| 工作温度范围 | — | 0°C to 95°C |
| RoHS 状态 | — | Compliant |
| Lead-Free | — | Yes |
| 安装类型 | — | Surface Mount |