NT5AD512M16C4-JR vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of NT5AD512M16C4-JR by Nanya Technology and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5AD512M16C4-JR | K4A8G165WC-BCRC |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $73.75 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x16 | 512M x 16 |
| Density | 8 Gbit | 8 Gb |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Data Rate | 1.6 GHz (DDR4-3200) | 2400 Mbps |
| Package | TFBGA-96 | 96-ball FBGA (9mm x 13mm) |
| Operating Temperature Range | 0°C to +95°C | — |
| Standby Current | 0.023 A (max) | — |
| Number of Terminals | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | Compliant |
| VPP Voltage | — | 2.5 V |
| Operating Temperature | — | 0°C to +95°C (case) |
| Interface | — | 16-bit I/O |
| Banks | — | 16 (4 bank groups) |
| Burst Length | — | 8 (BL8) |
| CAS Latency | — | Programmable (e.g., 16, 17, 18) |
| Refresh | — | Temperature-compensated self-refresh (TCSR) |
| Mounting Type | — | Surface Mount |