NT5CB256M16CP-DI vs K4B4G1646D-BYK0 Comparison
Detailed side-by-side comparison of NT5CB256M16CP-DI by Nanya Technology and K4B4G1646D-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT5CB256M16CP-DI | K4B4G1646D-BYK0 |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $2.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | 256M x 16 |
| Density | 4 Gb | 4 Gbit |
| Supply Voltage | 1.35 V (DDR3L) | 1.35 V (1.5 V compatible) |
| Data Rate | 1600 Mbps/pin (max) | 1600 Mbps (PC3-12800) |
| Package | TFBGA-96 | 96-ball FBGA |
| Number of Banks | 8 | — |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | — |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Additive Latency | 0-13 | — |
| Operating Temperature Range | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Differential Clock Input | Yes (CK, CK#) | — |
| On-Die Termination (ODT) | Yes | — |
| Operating Temperature | — | 0°C to 85°C |
| CAS Latency | — | Programmable (e.g., 11, 10, 9) |
| Burst Length | — | 8 (with burst chop 4) |
| On-Die Termination | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Number of Pins | — | 96 |
| Die Revision | — | D-die |