NT5CC256M16CP-DI vs H5TC4G63AFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CC256M16CP-DI disebabkan oleh Nanya Technology dan H5TC4G63AFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5CC256M16CP-DI | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | Nanya Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3.98 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | 256M x 16 |
| Total Density | 4Gb | — |
| Tegangan Pemberi Arus | 1.35V (1.283V to 1.45V) | — |
| Speed Grade | DDR3-1600 (CL11) | — |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | 11, 12, 13 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Internal Banks | 8 | — |
| Kemasan | VFBGA-96 | 96-ball FBGA |
| Suhu Operasi | 0C to +95C (Tc) [DATA_NEEDED: exact range] | — |
| Antaramuka | Differential clock (CK, CK#) | 16-bit I/O |
| Burst Length | 8, 4 | 8 and 4 (with burst chop) |
| On-Die Termination | Yes (programmable) | — |
| RoHS | Compliant | Compliant |
| Process Technology | 70nm | — |
| Density | — | 4Gb |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Kadar Data | — | 1866 Mbps (PC3L-14900) |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Gambaran Suhu Operasi | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |