NT5CC256M16CP-DIB1 vs K4A8G165WB-BCPB Comparison
Detailed side-by-side comparison of NT5CC256M16CP-DIB1 by Nanya Technology and K4A8G165WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB ✓ ActiveSpecification Comparison
| Parameter | NT5CC256M16CP-DIB1 | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.00 | $2.30 |
| Memory Type | DDR3L SDRAM | — |
| Density | 4Gb | 8 Gb |
| Organization | 256M x 16 | 512M x 16 |
| Supply Voltage | 1.35V | 1.2 V (1.14 V to 1.26 V) |
| Data Rate | 1600Mbps (DDR3L-1600) | — |
| Package | TFBGA-96, 9x13mm, 0.8mm pitch | 96-ball FBGA (TFBGA-96) |
| Number of Banks | 8 | — |
| CAS Latency (CL) | 11 | — |
| Write Latency (CWL) | 8 | — |
| tRCD/tRP | 11 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | 8 (BL8) |
| Operating Temperature | 0C to +95C (Tcase) | 0°C to 85°C |
| RoHS | Compliant | — |
| Halogen Free | Yes | — |
| Lead Free | Yes | — |
| Speed Grade | — | 2133 Mbps (PC4-17000) |
| Burst Type | — | Sequential and Interleave |
| CAS Latency | — | Programmable (e.g., 15, 16, 18) |
| Refresh | — | Auto and Self Refresh |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Package Shape | — | RECTANGULAR |
| Terminal Position | — | BOTTOM |
| RoHS Status | — | Compliant |